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Same model may have multiple batches, images only for reference.
TPC8212-H(TE12LQ,M Toshiba Semiconductor and Storage
Same model may have multiple batches, images only for reference.

TPC8212-H(TE12LQ,M

Part No TPC8212-H(TE12LQ,M
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET 2N-CH 30V 6A SOP8
Datasheet
TPC8212-H(TE12LQ,M Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Toshiba Semiconductor and Storage
Packaging Reel - TR
Status Obsolete(EOL)
FET Type 2 N-Channel (Dual)
FET Feature Logic Level Gate
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 6A
Maximum Rds On at Id,Vgs 21 mOhm @ 3A, 10V
Gate-Source Threshold Voltage 2.3V @ 1mA
Max Gate Charge 16nC @ 10V
Max Input Capacitance 840pF @ 10V
Maximum Power Dissipation 450mW
Temperature Range - Operating 150°C (TJ)
Mounting SMD (SMT)
Case / Package 8-SOP (5.5x6.0)
Win Source Part Number 1111105-TPC8212-H(TE12LQ,M
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian TPC8212-H(TE12LQ,M CAD Model

Description

The Toshiba TPC8212-H(TE12LQ,M is a surface mount discrete semiconductor product designed for use in FET arrays. Bold the product name (e.g., BAV99S,135 → TPC8212-H(TE12LQ,M) and manufacturer (e.g., Nexperia USA Inc. → Toshiba).

  • Status: Obsolete (EOL)
  • Temperature Range: Up to 150 degrees Celsius
  • Power Dissipation: 450mW

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