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Same model may have multiple batches, images only for reference.
TPC8213-H(TE12LQ,M Toshiba Semiconductor and Storage
Same model may have multiple batches, images only for reference.

TPC8213-H(TE12LQ,M

Part No TPC8213-H(TE12LQ,M
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET 2N-CH 60V 5A SOP8
Datasheet
TPC8213-H(TE12LQ,M Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Toshiba Semiconductor and Storage
Packaging Reel - TR
Status Obsolete(EOL)
FET Type 2 N-Channel (Dual)
FET Feature Logic Level Gate
Drain-Source Breakdown Voltage 60V
Continuous Drain Current at 25°C 5A
Maximum Rds On at Id,Vgs 50 mOhm @ 2.5A, 10V
Gate-Source Threshold Voltage 2.3V @ 1mA
Max Gate Charge 11nC @ 10V
Max Input Capacitance 625pF @ 10V
Maximum Power Dissipation 450mW
Temperature Range - Operating 150°C (TJ)
Mounting SMD (SMT)
Case / Package 8-SOP (5.5x6.0)
Win Source Part Number 1111106-TPC8213-H(TE12LQ,M
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian TPC8213-H(TE12LQ,M CAD Model

Description

The Toshiba Semiconductor and Storage TPC8213-H(TE12LQ,M (part number 1111106) is a dual N-channel MOSFET that is designed to be used in various applications, including power supplies, motor control, and lighting.

  • Gate Type: Logic-Level
  • Package: Surface-Mount
  • Voltage Rating: 60V
  • Continuous Drain Current: 5A @ 25°C
  • Supply: Limited

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