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Same model may have multiple batches, images only for reference.
TPC8A05-H Real Image
Same model may have multiple batches, images only for reference.

TPC8A05-H

Part No TPC8A05-H
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 10A 8SOP
Datasheet
TPC8A05-H Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Toshiba Semiconductor and Storage
Packaging Reel - TR
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 10A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2.3V @ 1mA
Max Gate Charge 15nC @ 10V
Max Input Capacitance 1700pF @ 10V
Maximum Gate-Source Voltage ±20V
FET Feature Schottky Diode (Body)
Power Dissipation (Max) 1W (Ta)
Maximum Rds On at Id,Vgs 13.3 mOhm @ 5A, 10V
Temperature Range - Operating 150°C (TJ)
Mounting SMD (SMT)
Case / Package 8-SOP (5.5x6.0)
Dimension 8-SOIC (0.173", 4.40mm Width)
Win Source Part Number 056809-TPC8A05-H
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian TPC8A05-H CAD Model

Description

The TPC8A05-H is a MOSFET manufactured by Toshiba Semiconductor and Storage.

  • It Has: an 8-SOP (5.5x6.0) case/package and is designed to be used in medium-popularity applications
  • TPC8A05-H Is: a reliable and efficient MOSFET that can be used in various electronic devices
  • Maximum Rds On: of 13.3 mOhm @ 5A and 10V
  • It Is: a great choice for those who need a high-quality MOSFET that is easy to use and provides excellent performance

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Pricing & Ordering

Quantity Unit Price Ext. Price
225+ $0.2610 $58.7250
540+ $0.2148 $115.9920
835+ $0.2079 $173.5965
1,150+ $0.2010 $231.1500
1,480+ $0.1952 $288.8960
1,990+ $0.1744 $347.0560
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 34,434 pieces
MOQ: 225 pcs
Order Increment : 1 pcs
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