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TPC8A06-H(TE12LQM)

Part No TPC8A06-H(TE12LQM)
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 12A 8SOP / Trans MOSFET N-CH Si 30V 12A 8-Pin SOP T/R
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Toshiba Semiconductor and Storage
Packaging Reel package
Part Status Obsolete(EOL)
Channel Type Type N
Technology MOSFET
Drain Source Voltage 30V
Current - Continuous Drain (Id) @ 25°C 12A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Vgs(th) (Maximum) @ Id 2.3V @ 1mA
Gate Charge (Qg) (Maximum) @ Vgs 19nC @ 10V
Input Capacitance (Ciss) (Maximum) @ Vds 1800pF @ 10V
Vgs (Maximum) ±20V
FET Feature Schottky Diode (Body)
Rds On (Maximum) @ Id, Vgs 10.1 mOhm @ 6A, 10V
Mounting SMD
Manufacturer Package 8-SOP (5.5x6.0)
Package 8-SOIC (0.173", 4.40mm Width)
Win Source Part Number 797815-TPC8A06-H(TE12LQM)
Popularity Medium
Supply and Demand Status Balance
Family Name TPC8A06-H
Introduction Date June 05, 2009
ECCN EAR99
Country of Origin Malaysia
Estimated EOL Date Obsolete / End of life
Ultra Librarian 3D Model Ultra Librarian TPC8A06-H(TE12LQM) CAD Model

Description

Toshiba Semiconductor and Storage's TPC8A06-H MOSFET is a high-performance, N-channel component designed for use in a wide range of applications. Toshiba Semiconductor and Storage

  • Continuous Drain Current: 12A
  • Drain-Source Voltage: 30V
  • Package: 8-SOIC (0.173", 4.40mm Width)
  • Features: Schottky diode (body)
  • Operating Temperature Range: -55°C to 150°C
  • Packaging: Reel
  • Format: 8-SOP (5.5x6.0)
  • Family: TPC8A06-H
  • ECCN: EAR99

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