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Same model may have multiple batches, images only for reference.
TPCA8003-H
Same model may have multiple batches, images only for reference.

TPCA8003-H

Part No TPCA8003-H
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 35A SOP-8 ADV
Datasheet
TPCA8003-H Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Toshiba Semiconductor and Storage
Packaging Reel - TR
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 35A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2.3V @ 1mA
Max Gate Charge 25nC @ 10V
Max Input Capacitance 1465pF @ 10V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 1.6W (Ta), 45W (Tc)
Maximum Rds On at Id,Vgs 6.6 mOhm @ 18A, 10V
Temperature Range - Operating 150°C (TJ)
Mounting SMD (SMT)
Case / Package 8-SOP Advance (5x5)
Dimension 8-PowerVDFN
Win Source Part Number 056443-TPCA8003-H
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian TPCA8003-H CAD Model

Description

The Toshiba Semiconductor and Storage MOSFET is a N-Channel polarity transistor that has a maximum power dissipation of 1.6W (Ta), 45W (Tc).

  • It Is Mounted Through: surface-mount technology (SMT) with an 8-SOP Advance (5x5) case/package
  • Drain-Source Breakdown Voltage: 30V
  • Maximum Rds On: 6.6 mOhm @ 18A, 10V
  • Gate-Source Threshold Voltage: 2.3V @ 1mA
  • Maximum Gate Charge: 25nC @ 10V
  • Maximum Input Capacitance: 1465pF @ 10V
  • Supply and Demand Status: is balanced

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Pricing & Ordering

Quantity Unit Price Ext. Price
140+ $0.4250 $59.5000
335+ $0.3488 $116.8480
515+ $0.3373 $173.7095
710+ $0.3269 $232.0990
915+ $0.3165 $289.5975
1,225+ $0.2830 $346.6750
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 6,300 pieces
MOQ: 140 pcs
Order Increment : 1 pcs
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