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Same model may have multiple batches, images only for reference.
TPCA8011-H(TE12LQM
Same model may have multiple batches, images only for reference.

TPCA8011-H(TE12LQM

Part No TPCA8011-H(TE12LQM
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 20V 40A SOP-8 ADV
Datasheet
TPCA8011-H(TE12LQM Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Toshiba Semiconductor and Storage
Packaging Reel - TR
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 20V
Continuous Drain Current at 25°C 40A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 2.5V, 4.5V
Gate-Source Threshold Voltage 1.3V @ 200μA
Max Gate Charge 32nC @ 5V
Max Input Capacitance 2900pF @ 10V
Maximum Gate-Source Voltage ±12V
Power Dissipation (Max) 1.6W (Ta), 45W (Tc)
Maximum Rds On at Id,Vgs 3.5 mOhm @ 20A, 4.5V
Temperature Range - Operating 150°C (TJ)
Mounting SMD (SMT)
Case / Package 8-SOP Advance (5x5)
Dimension 8-PowerVDFN
Win Source Part Number 1111114-TPCA8011-H(TE12LQM
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian TPCA8011-H(TE12LQM CAD Model

Description

The TPCA8011-H(TE12LQM MOSFET is an N-Channel polarity transistor designed for use in various applications such as power management, motor control, and lighting. The MOSFET is manufactured by Toshiba Semiconductor and Storage.

  • Maximum Power Dissipation: 1.6W (Ta), 45W (Tc)
  • Maximum Gate-Source Voltage: ±12V
  • Case/Package: 8-SOP Advance (5x5)
  • Temperature Range: 150°C (TJ)
  • Maximum Rds On @ Id, Vgs: 3.5 mOhm @ 20A, 4.5V

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