The Toshiba Semiconductor and Storage 056816-TPCA8012-H is an N-Channel MOSFET with a drain-source breakdown voltage of 30V and a continuous drain current of 40A (Ta) @ 25°C.

• Gate-Source Threshold Voltage: 2.5V @ 1mA
• Maximum Gate Charge: 42nC @ 10V
• Maximum Input Capacitance: 3713pF @ 10V
• Maximum Gate-Source Voltage: ±20V
• Maximum Rds On: 4.9 mOhm @ 20A, 10V
• Operating Temperature Range: 150°C (TJ)
• Mounted Using: SMD (SMT) technology
• This MOSFET Is Categorized Under: discrete semiconductor products and has a medium popularity in the market
• However: it is important to note that this MOSFET is obsolete(EOL) and may not be readily available in the market