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Same model may have multiple batches, images only for reference.
TPCA8045-H Real Image
Same model may have multiple batches, images only for reference.

TPCA8045-H

Part No TPCA8045-H
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 40V 46A 8-SOP ADV
Datasheet
TPCA8045-H Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Toshiba Semiconductor and Storage
Packaging Cut Reel
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 40V
Continuous Drain Current at 25°C 46A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2.3V @ 1mA
Max Gate Charge 90nC @ 10V
Max Input Capacitance 7540pF @ 10V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 1.6W (Ta), 45W (Tc)
Maximum Rds On at Id,Vgs 3.6 mOhm @ 23A, 10V
Temperature Range - Operating 150°C (TJ)
Mounting SMD (SMT)
Case / Package 8-SOP Advance (5x5)
Dimension 8-PowerVDFN
Win Source Part Number 094174-TPCA8045-H
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian TPCA8045-H CAD Model

Description

The TPCA8045-H is an N-channel MOSFET from Toshiba Semiconductor and Storage that comes in an 8-SOP Advance (5x5) package.

  • Drain-Source Breakdown Voltage: 40V
  • Continuous Drain Current (Ta) @ 25°C: 46A
  • Gate-Source Threshold Voltage: 2.3V @ 1mA
  • Maximum Gate Charge @ 10V: 90nC
  • Maximum Input Capacitance @ 10V: 7540pF
  • Maximum Gate-Source Voltage: ±20V
  • Maximum Rds On @ Id,Vgs: 3.6 mOhm @ 23A, 10V
  • Power Dissipation: 1.6W (Ta) and 45W (Tc)
  • Operating Temperature Range: 150°C (TJ)
  • Mounting: SMD (SMT)
  • Category: Discrete Semiconductor Products

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Quantity Unit Price Ext. Price
16,670+ $0.0035 $58.3450
33,335+ $0.0035 $116.6725
50,000+ $0.0035 $175.0000
66,670+ $0.0035 $233.3450
83,335+ $0.0035 $291.6725
150,000+ $0.0023 $345.0000
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