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Same model may have multiple batches, images only for reference.
TPCA8056 Real Image
Same model may have multiple batches, images only for reference.

TPCA8056

Part No TPCA8056
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 48A 8SOP-ADV
Datasheet
TPCA8056 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Toshiba Semiconductor and Storage
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 48A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2.3V @ 1mA
Max Gate Charge 74nC @ 10V
Max Input Capacitance 6200pF @ 10V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 1.6W (Ta), 63W (Tc)
Maximum Rds On at Id,Vgs 2.2 mOhm @ 24A, 10V
Temperature Range - Operating 150°C (TJ)
Mounting SMD (SMT)
Case / Package 8-SOP Advance (5x5)
Dimension 8-PowerVDFN
Win Source Part Number 056877-TPCA8056
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian TPCA8056 CAD Model

Description

The 056877-TPCA8056 MOSFET from Toshiba Semiconductor and Storage is an N-channel polarity device with a maximum power dissipation of 1.6W (Ta) and 63W (Tc).

  • Polarity: N-channel
  • Power Dissipation: 1.6W (Ta) and 63W (Tc)
  • Mounting: Surface mount device (SMD)
  • Package: 8-SOP Advance (5x5)
  • Dimension: 8-PowerVDFN
  • Drain-Source Breakdown Voltage: 30V
  • Continuous Drain Current: 48A (Ta)
  • Gate-Source Threshold Voltage: 2.3V @ 1mA
  • Maximum Gate Charge: 74nC @ 10V
  • Maximum Input Capacitance: 6200pF @ 10V
  • Maximum Rds On @ Id, Vgs: 2.2 mOhm @ 24A, 10V
  • RoHS Compliant: Yes
  • Popularity: Medium

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