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Same model may have multiple batches, images only for reference.
TPCC8065-H,LQ
Same model may have multiple batches, images only for reference.

TPCC8065-H,LQ

Part No TPCC8065-H,LQ
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 13A 8TSON-ADV
Datasheet
TPCC8065-H,LQ Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Toshiba Semiconductor and Storage
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 13A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2.3V @ 200μA
Max Gate Charge 20nC @ 10V
Max Input Capacitance 1350pF @ 10V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 700mW (Ta), 18W (Tc)
Maximum Rds On at Id,Vgs 11.4 mOhm @ 6.5A, 10V
Temperature Range - Operating 150°C (TJ)
Mounting SMD (SMT)
Case / Package 8-TSON Advance (3.3x3.3)
Dimension 8-PowerVDFN
Win Source Part Number 213286-TPCC8065-H,LQ
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian TPCC8065-H,LQ CAD Model

Description

The Toshiba Semiconductor and Storage 213286-TPCC8065-H,LQ is a MOSFET technology component with an N-channel polarity.

  • Maximum Power Dissipation: 700mW (Ta) or 18W (Tc)
  • Continuous Drain Current: 13A (Ta) @ 25°C
  • Maximum Gate-Source Voltage: ±20V
  • Maximum Rds On: 11.4 mOhm @ 6.5A, 10V
  • Maximum Gate Charge: 20nC @ 10V
  • Maximum Input Capacitance: 1350pF @ 10V
  • Package: 8-TSON Advance (3.3x3.3)
  • Mounting: surface-mount technology.

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Pricing & Ordering

Quantity Unit Price Ext. Price
16,670+ $0.0035 $58.3450
33,335+ $0.0035 $116.6725
50,000+ $0.0035 $175.0000
66,670+ $0.0035 $233.3450
83,335+ $0.0035 $291.6725
150,000+ $0.0023 $345.0000
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 150,030 pieces
MOQ: 16670 pcs
Order Increment : 1 pcs
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