The TPCC8138 is a P-channel MOSFET manufactured by Toshiba Semiconductor and Storage. It is designed for a wide range of power management applications, particularly in portable devices and battery-powered systems. This MOSFET is characterized by its low on-resistance, which contributes to reduced power loss and improved overall efficiency.

Applications

• Power management in portable devices
• Battery charging circuits
• Load switching applications
• DC-DC converters

Features

• P-channel MOSFET
• Low drain-source on-resistance (RDS(on))
• Low gate charge
• High-speed switching
• Surface-mount package
• Halogen-free

Benefits

• Enhanced power efficiency due to low RDS(on)
• Reduced power dissipation and heat generation
• Faster switching for high-frequency applications
• Compact design for space-saving applications
• Environmentally friendly due to halogen-free construction
• Improved battery life in portable devices

Technical Specifications

The TPCC8138 has a drain-source voltage (VDS) rating of -30V and a continuous drain current (ID) rating of -4.0A. The RDS(on) is typically 55 mΩ at VGS = -10V and 80 mΩ at VGS = -4.5V. The gate-source threshold voltage (VGS(th)) ranges from -1.0V to -3.0V. The device comes in a small L1Q(M) package, ideal for compact designs. It meets RoHS compliance standards.

This MOSFET is optimized for applications where efficiency and size are paramount. Its low on-resistance and fast switching characteristics make it a suitable choice for demanding power management systems. The TPCC8138 provides a reliable and efficient solution for a variety of power switching needs.