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Same model may have multiple batches, images only for reference.
TPCC8A01-H Real Image
Same model may have multiple batches, images only for reference.

TPCC8A01-H

Part No TPCC8A01-H
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 21A SBD 8TSON
Datasheet
TPCC8A01-H Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Toshiba Semiconductor and Storage
Packaging Reel - TR
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 21A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2.3V @ 1mA
Max Gate Charge 20nC @ 10V
Max Input Capacitance 1900pF @ 10V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 700mW (Ta), 30W (Tc)
Maximum Rds On at Id,Vgs 9.9 mOhm @ 10.5A, 10V
Temperature Range - Operating 150°C (TJ)
Mounting SMD (SMT)
Case / Package 8-TSON
Dimension 8-VDFN Exposed Pad
Win Source Part Number 098321-TPCC8A01-H
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian TPCC8A01-H CAD Model

Description

The Toshiba Semiconductor and Storage TPCC8A01-H MOSFET is a high-performance component designed for discrete semiconductor products.

  • Popularity: Medium
  • Availability: Obsolete and end-of-life
  • Supply and Demand: Sufficient
  • Power Dissipation: 700mW
  • Maximum Rds On: 9.9 mOhm @ Id, Vgs of 10.5A, 10V
  • Package: 8-TSON
  • Polarity: N-Channel

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Pricing & Ordering

Quantity Unit Price Ext. Price
40+ $1.6320 $65.2800
90+ $1.3398 $120.5820
135+ $1.2982 $175.2570
185+ $1.2555 $232.2675
240+ $1.2139 $291.3360
320+ $1.0880 $348.1600
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 114,456 pieces
MOQ: 40 pcs
Order Increment : 1 pcs
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