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Same model may have multiple batches, images only for reference.
TPCF8104 Toshiba Semiconductor and Storage
Same model may have multiple batches, images only for reference.

TPCF8104

Part No TPCF8104
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 30V 6A VS-8
Datasheet
TPCF8104 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Toshiba Semiconductor and Storage
Packaging Cut Reel
Polarity P-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 6A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2V @ 1mA
Max Gate Charge 34nC @ 10V
Max Input Capacitance 1760pF @ 10V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 700mW (Ta)
Maximum Rds On at Id,Vgs 28 mOhm @ 3A, 10V
Temperature Range - Operating 150°C (TJ)
Mounting SMD (SMT)
Case / Package VS-8 (2.9x1.5)
Dimension 8-SMD, Flat Lead
Win Source Part Number 097876-TPCF8104
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian TPCF8104 CAD Model

Description

The 097876-TPCF8104 is a P-channel MOSFET manufactured by Toshiba Semiconductor and Storage.

  • Supply and Demand: Sufficient
  • Power Dissipation: 700mW
  • Continuous Drain Current: 6A @ 25°C
  • Gate-Source Threshold Voltage: 2V @ 1mA
  • Maximum Gate-Source Voltage: ±20V
  • Operating Temperature: 150°C

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Pricing & Ordering

Quantity Unit Price Ext. Price
210+ $0.2760 $57.9600
515+ $0.2264 $116.5960
790+ $0.2195 $173.4050
1,090+ $0.2125 $231.6250
1,405+ $0.2056 $288.8680
1,875+ $0.1848 $346.5000
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 112,900 pieces
MOQ: 210 pcs
Order Increment : 1 pcs
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