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Same model may have multiple batches, images only for reference.
TPCF8402 Real Image
Same model may have multiple batches, images only for reference.

TPCF8402

Part No TPCF8402
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N/P-CH 30V 4A/3.2A VS-8
Datasheet
TPCF8402 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Toshiba Semiconductor and Storage
Packaging Reel - TR
Status Obsolete(EOL)
FET Type N and P-Channel
FET Feature Logic Level Gate
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 4A, 3.2A
Maximum Rds On at Id,Vgs 50 mOhm @ 2A, 10V
Gate-Source Threshold Voltage 2V @ 1mA
Max Gate Charge 10nC @ 10V
Max Input Capacitance 470pF @ 10V
Maximum Power Dissipation 330mW
Temperature Range - Operating 150°C (TJ)
Mounting SMD (SMT)
Case / Package VS-8 (2.9x1.5)
Win Source Part Number 098955-TPCF8402
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian TPCF8402 CAD Model

Description

The Toshiba Semiconductor and Storage TPCF8402 is a discrete semiconductor product that belongs to the FET type category.

  • FET Type: N and P-channel FETs with logic-level gates
  • Package: Reel-TR
  • Mounting: Surface-mount technology
  • Supply and Demand: Limited
  • Status: Obsolete or EOL
  • Operating Temperature: 150°C
  • Maximum Power Dissipation: 330mW
  • Drain-Source Breakdown Voltage: 30V
  • Maximum Rds on: 50 mOhm @ 2A, 10V
  • Win Source Part Number: 098955-TPCF8402

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