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TPCP8003-H(TE85L,F

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Part No	TPCP8003-H(TE85L,F
Manufacturer	Toshiba Semiconductor and Storage
Catalog	Transistors - FETs, MOSFETs - RF
Description	MOSFET N-CH 100V 2.2A PS-8 / N-Channel 100 V 2.2A (Ta) 840mW (Ta) Surface Mount PS-8 (2.9x2.4)
Sample
Rohs State	Need to verify
ECAD Module
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Products specifications Report Issue?

Category	Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr	Toshiba Semiconductor and Storage
Series	U-MOSIII-H
Package	Tape & Reel (TR)
Product Status	Obsolete
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	100 V
Current - Continuous Drain (Id) @ 25°C	2.2A (Ta)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	180mOhm @ 1.1A, 10V
Vgs(th) (Max) @ Id	2.3V @ 1mA
Gate Charge (Qg) (Max) @ Vgs	7.5 nC @ 10 V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	360 pF @ 10 V
Power Dissipation (Max)	840mW (Ta)
Temperature Range - Operating	150°C (TJ)
Mounting	SMD (SMT)
Supplier Device Package	PS-8 (2.9x2.4)
Package / Case	8-SMD, Flat Lead
Base Product Number	TPCP8003
MSL Level	1 (Unlimited)
ECCN	EAR99
HTSUS	8541.21.0095
Standard Package	3,000
Win Source Part Number	1168950-TPCP8003-H(TE85L,F
Ultra Librarian 3D Model	Ultra Librarian TPCP8003-H(TE85L,F CAD Model

Alternative Products

Description

The TPCP8003-H(TE85L,F) is an N-Channel MOSFET with a drain to source voltage (Vdss) of 100 V and a continuous drain current (Id) of 2.2A @ 25°C manufactured by Toshiba Semiconductor and Storage.

Drain to Source Voltage (Vdss): 100 V
Continuous Drain Current (Id): 2.2A @ 25°C
On-State Resistance: 180mOhm @ 1.1A and 10V
Package: 8-SMD, Flat Lead
Supplier Device Package: PS-8 (2.9x2.4)
Gate Charge (Qg): 7.5 nC @ 10V
Input Capacitance (Ciss): 360 pF @ 10Vds
Maximum Gate-Source Voltage: ±20V
Operating Temperature Range: 150°C (TJ)
Status: Obsolete

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