The TPCP8407 is a P-channel MOSFET manufactured by Toshiba Semiconductor and Storage. It is designed for use in a variety of power management applications, including load switching, DC-DC converters, and portable devices. Its key features include low on-resistance and low gate charge, which contribute to high efficiency and reduced power loss.

Applications

• Load Switches
• DC-DC Converters
• Portable Device Power Management
• Battery Protection Circuits

Features

• P-Channel MOSFET
• Low Drain-Source On-Resistance (RDS(ON))
• Low Gate Charge (Qg)
• 1.8V Drive Capability
• Surface Mount Device (SMD)
• Lead-Free Plating

Benefits

• Improved Power Efficiency Due to Low RDS(ON)
• Reduced Power Loss and Heat Generation
• Simplified Gate Drive Circuitry
• Compact Size for Space-Constrained Applications
• Environmentally Friendly Due to Lead-Free Construction

Additional Details

The TPCP8407 offers a low gate charge, which facilitates fast switching speeds and minimizes power losses during switching transitions. The low on-resistance characteristic reduces voltage drop and power dissipation when the MOSFET is in the ON state. This device is well-suited for power management in applications like smartphones, tablets, and other portable devices. With a 1.8V drive capability, it allows for direct logic-level control, which simplifies design and reduces component count. The small surface mount package is ideal for high-density circuit board layouts, making it suitable for compact electronic devices.

Specifications:

• V_DSS (Drain-Source Voltage): -30V
• I_D (Drain Current): -5A
• R_DS(on) (Drain-Source On-Resistance): 39 mΩ (V_GS = -4.5V), 60 mΩ (V_GS = -2.5V)
• P_D (Power Dissipation): 1.5W

The TPCP8407 is RoHS compliant.