The Toshiba Semiconductor and Storage MOSFET (Metal Oxide) is a N-Channel FET type electronic component with a drain to source voltage (Vdss) of 60V and a current - continuous drain (Id) @ 25°C of 100A (Tc).

• Drain to Source Voltage (Vdss): 60V
• Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
• Rds On (Max) @ Id, Vgs: 1.34mOhm @ 50A, 10V
• Vgs(th) (Max) @ Id: 2.5V @ 1mA
• Power Dissipation (Max): 960mW, 170W (Tc)
• Gate Charge (Qg) (Max) @ Vgs: 91 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds: 8100 pF @ 30 V
• Vgs (Max): ±20V
• Temperature Range - Operating: 175°C
• Case / Package: 8-PowerVDFN