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TPHR9003NL

Part No TPHR9003NL
Manufacturer Toshiba Semiconductor and Storage
Sample
Rohs State rohs
ECAD Module
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Reference Date Code 14+Rohs
Reference case QFN8
Manufacturer Toshiba Semiconductor and Storage
Manufacturer Homepage www.semicon.toshiba.co.jp/eng
Win Source Part Number 735414-TPHR9003NL
Popularity Low
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian TPHR9003NL CAD Model

Description

The TPHR9003NL is an N-channel power MOSFET manufactured by Toshiba Semiconductor and Storage. This device is designed for high-efficiency power management applications, offering low on-resistance and fast switching capabilities. It is particularly well-suited for use in synchronous rectification circuits and DC-DC converters.

Applications:

  • Synchronous rectification in power supplies
  • DC-DC converters
  • Motor control circuits
  • Load switches
  • Power management in portable devices

Features:

  • Low drain-source on-resistance (RDS(ON)): Minimizes conduction losses, improving efficiency.
  • High-speed switching: Reduces switching losses, enabling efficient operation at higher frequencies.
  • Low gate charge (Qg): Minimizes switching losses and improves efficiency.
  • Logic level gate drive: Allows direct drive from logic circuits, simplifying design.
  • Surface mount package (TO-252): Facilitates automated assembly and compact designs.

Benefits:

  • Improved energy efficiency: Low RDS(ON) and fast switching reduce power dissipation.
  • Extended battery life: In portable devices, reduced power consumption translates to longer operating times.
  • Reduced heat generation: Lower power loss minimizes heat, improving system reliability.
  • Simplified design: Logic level gate drive simplifies gate drive circuitry.
  • Compact form factor: Surface mount package saves board space.

Additional Details:

The TPHR9003NL typically comes in a TO-252 (DPAK) surface-mount package for efficient heat dissipation and easy mounting. Important electrical characteristics include the drain-source voltage rating (VDSS), gate-source voltage rating (VGSS), continuous drain current rating (ID), and pulsed drain current rating (IDP). The RDS(ON) is specified at a particular gate-source voltage and drain current. This MOSFET is designed to be RoHS compliant. Proper gate drive is crucial for optimizing switching performance and minimizing losses. Detailed recommendations for gate resistor selection and PCB layout are provided in the device datasheet.

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Pricing & Ordering

Quantity Unit Price Ext. Price
105+ $0.4942 $51.8910
220+ $0.4624 $101.7280
340+ $0.4464 $151.7760
485+ $0.4145 $201.0325
630+ $0.3986 $251.1180
785+ $0.3827 $300.4195
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 60,000 pieces
MOQ: 105 pcs
Order Increment : 1 pcs
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