The Toshiba Semiconductor and Storage 1111256-TPN11003NL, LQ is an N-channel MOSFET with a drain-source breakdown voltage of 30V and continuous drain current of 11A (Tc).

• Drain-Source Breakdown Voltage: 30V
• Continuous Drain Current: 11A (Tc)
• Gate-Source Threshold Voltage: 2.3V @ 100μA
• Maximum Gate Charge: 7.5nC @ 10V
• Maximum Input Capacitance: 660pF @ 15V
• Maximum Gate-Source Voltage: ±20V
• Maximum Rds On: 11 mOhm @ 5.5A, 10V
• Power Dissipation: 700mW (Ta), 19W (Tc)
• Drive Voltage: 4.5V, 10V
• Mounting: SMD (SMT)
• Temperature Range: 150°C (TJ)
• Case/Package: 8-TSON Advance (3.3x3.3)