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Same model may have multiple batches, images only for reference.
TPN1110ENH,L1Q Toshiba Semiconductor and Storage
Same model may have multiple batches, images only for reference.

TPN1110ENH,L1Q

Part No TPN1110ENH,L1Q
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 200V 7.2A 8TSON
Datasheet
TPN1110ENH,L1Q Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Toshiba Semiconductor and Storage
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 200V
Continuous Drain Current at 25°C 7.2A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 200μA
Max Gate Charge 7nC @ 10V
Max Input Capacitance 600pF @ 100V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 700mW (Ta), 39W (Tc)
Maximum Rds On at Id,Vgs 114 mOhm @ 3.6A, 10V
Temperature Range - Operating 150°C (TJ)
Mounting SMD (SMT)
Case / Package 8-TSON Advance (3.3x3.3)
Dimension 8-PowerVDFN
Win Source Part Number 1111258-TPN1110ENH,L1Q
Popularity Medium
Supply and Demand Status Balance
Application Field Used in Portable Devices
Ultra Librarian 3D Model Ultra Librarian TPN1110ENH,L1Q CAD Model

Description

The Toshiba Semiconductor and Storage MOSFET with Win Source Part Number 1111258-TPN1110ENH,L1Q is a power semiconductor device that features an N-channel polarity.

  • Channel Type: N-Channel
  • Power Dissipation: 700mW (Ta) and 39W (Tc)
  • Drain-Source Breakdown Voltage: 200V
  • Continuous Drain Current: 7.2A (Ta)
  • Maximum Rds On: 114 mOhm @ 3.6A, 10V
  • Category: Discrete Semiconductor Products
  • Mounting Type: SMD (SMT)
  • Maximum Gate-Source Voltage: ±20V
  • Gate-Source Threshold Voltage: 4V @ 200μA
  • Popularity: Popular
  • Supply and Demand: Balanced
  • Application: Portable Devices

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