The Toshiba Semiconductor and Storage TPN2R503NC,L1Q is an N-channel MOSFET with a drain-source breakdown voltage of 30V.

• Drain-Source Breakdown Voltage: 30V
• Continuous Drain Current: 40A (Ta) @ 25°C
• Power Dissipation (Max): 700mW (Ta), 35W (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Gate-Source Threshold Voltage: 2.3V @ 500μA
• Maximum Gate-Source Voltage: ±20V
• Maximum Rds On @ Id,Vgs: 2.5 mOhm @ 20A, 10V
• Maximum Gate Charge: 40nC @ 10V
• Maximum Input Capacitance: 2230pF @ 15V
• Packaging: 8-TSON Advance (3.3x3.3)
• Mounting: SMD (SMT)
• Operating Temperature Range: 150°C (TJ)
• Category: Discrete Semiconductor Products
• Status: Active
• Popularity: Medium
• Supply and Demand Status: Balanced