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TPWR8503NL,L1Q

Part No TPWR8503NL,L1Q
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 150A 8DSOP / N-Channel 30 V 150A (Tc) 800mW (Ta), 142W (Tc) Surface Mount 8-DSOP Advance
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Mfr Toshiba Semiconductor and Storage
Series U-MOSVIII-H
Package Tape & Reel
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V
Current - Continuous Drain (Id) @ 25°C 150A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 0.85mOhm @ 50A, 10V
Vgs(th) (Max) @ Id 2.3V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 74 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 6900 pF @ 15 V
Power Dissipation (Max) 800mW (Ta), 142W (Tc)
Temperature Range - Operating 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package 8-DSOP Advance
Package / Case 8-PowerWDFN
Base Product Number TPWR8503
Standard Package 5,000 pcs
MSL Level 1 (Unlimited)
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 846303-TPWR8503NL,L1Q
Ultra Librarian 3D Model Ultra Librarian TPWR8503NL,L1Q CAD Model

Description

The 846303-TPWR8503NL,L1Q is a N-Channel MOSFET transistor from Toshiba Semiconductor and Storage.

  • Series: U-MOSVIII-H
  • Function: Transistor - FET
  • Vdss: 30 V
  • Id @ 25°C: 150A
  • Rds On: 0.85mOhm
  • Vgs(th): 2.3V
  • Mounting Type: Surface Mount
  • Package: 8-PowerWDFN
  • Power Dissipation: 800mW
  • Qg: 74nC
  • Operating Temperature: -30°C to 150°C

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Pricing & Ordering

Quantity Unit Price Ext. Price
25+ $2.3539 $58.8475
60+ $1.9312 $115.8720
93+ $1.8711 $174.0123
128+ $1.8110 $231.8080
166+ $1.7498 $290.4668
221+ $1.5696 $346.8816
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 2,700 pieces
MOQ: 25 pcs
Order Increment : 1 pcs
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