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XPN3R804NC,L1XHQ

Part No XPN3R804NC,L1XHQ
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 40V 40A 8TSON / N-Channel 40 V 40A (Ta) 840mW (Ta), 100W (Tc) Surface Mount 8-TSON Advance-WF (3.1x3.1)
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Rohs State Need to verify
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Mfr Toshiba Semiconductor and Storage
Series U-MOSVIII
Package Tape & Reel
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 40 V
Current - Continuous Drain (Id) @ 25°C 40A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 3.8mOhm @ 20A, 10V
Vgs(th) (Max) @ Id 2.5V @ 300µA
Gate Charge (Qg) (Max) @ Vgs 35 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 2230 pF @ 10 V
Power Dissipation (Max) 840mW (Ta) , 100W (Tc)
Temperature Range - Operating 175°C
Mounting Type Surface Mount
Supplier Device Package 8-TSON Advance-WF (3.1x3.1)
Package / Case 8-PowerVDFN
Base Product Number XPN3R804
Standard Package 5,000
MSL Level 1 (Unlimited)
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 1338131-XPN3R804NC,L1XHQ
Ultra Librarian 3D Model Ultra Librarian XPN3R804NC,L1XHQ CAD Model

Description

The Toshiba Semiconductor and Storage 1338131-XPN3R804NC,L1XHQ is a N-channel MOSFET transistor that is designed for use in discrete semiconductor products, specifically in FETs, MOSFETs, and single FETs.

  • Manufacturer: Toshiba Semiconductor and Storage
  • Product: 1338131-XPN3R804NC,L1XHQ
  • Channel Type: N-Channel MOSFET
  • Drain to Source Voltage: 40 V
  • Power Dissipation: 840mW (Ta), 100W (Tc)
  • Mounting Type: Surface Mount
  • Package/Case: 8-PowerVDFN
  • Supplier Device Package: 8-TSON Advance-WF (3.1x3.1)
  • Drive Voltage: 4.5V
  • Minimum Rds On: 10V
  • Continuous Drain Current (Id): 40A (Ta)
  • Maximum Rds On: 3.8mOhm @ 20A, 10V
  • Gate Charge (Qg): 35 nC @ 10 V
  • Input Capacitance (Ciss): 2230 pF @ 10 V

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