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12N06G-TN3-R

Part No 12N06G-TN3-R
Manufacturer UTC
Catalog Hard To Find
Description 12 Amps, 60 Volts N-CHANNEL POWER MOSFET
Sample
Rohs State rohs
ECAD Module
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Manufacturer UTC
Win Source Part Number 1121219-12N06G-TN3-R
Manufacturer Homepage www.utc-ic.com
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian 12N06G-TN3-R CAD Model

Description

The 12N06G-TN3-R is an N-channel enhancement mode power MOSFET manufactured by UTC (Unisonic Technologies Co., Ltd.). This MOSFET is designed for high-efficiency switching applications. It's a discrete semiconductor component typically used in power management circuits.

Applications

  • DC-DC Converters: Used for voltage regulation and power conversion in various electronic devices.
  • Power Supplies: Found in switched-mode power supplies (SMPS) for computers, adapters, and other electronic equipment.
  • Motor Control: Employed in controlling the speed and direction of DC motors.
  • LED Lighting: Used in LED drivers for efficient power delivery.
  • Battery Management Systems (BMS): Integrated into BMS circuits for charging and discharging control.

Features

  • N-Channel MOSFET: Offers efficient switching capabilities with low on-resistance.
  • Enhancement Mode: Requires a gate voltage to turn on, providing stable operation.
  • Low On-Resistance (RDS(on)): Minimizes power loss during conduction, improving efficiency.
  • High Switching Speed: Enables fast switching frequencies for efficient power conversion.
  • RoHS Compliant: Complies with environmental regulations regarding hazardous substances.

Benefits

  • High Efficiency: Low RDS(on) reduces power dissipation, leading to increased efficiency and reduced heat generation.
  • Reliable Performance: Robust design ensures stable and dependable operation in demanding applications.
  • Compact Size: Allows for integration into space-constrained designs.
  • Simplified Circuit Design: Easy to implement in various power management circuits.
  • Improved Thermal Performance: Efficient heat dissipation enhances overall system reliability.

Specifications (Typical)

  • Drain-Source Voltage (VDS): 60V
  • Gate-Source Voltage (VGS): ±20V
  • Continuous Drain Current (ID): 12A (depending on the case temperature)
  • Pulsed Drain Current (IDM): 48A
  • Power Dissipation (PD): 35W (depending on the case temperature)
  • Operating Temperature Range: -55°C to +150°C
  • RDS(on) @ VGS=10V: Typically less than 0.09 Ohms
  • Package: TO-252

Additional Details: The 12N06G-TN3-R is typically mounted on a PCB using surface mount technology (SMT). Ensure proper heat sinking to manage thermal dissipation, especially at higher power levels. Refer to the manufacturer's datasheet for detailed electrical characteristics, thermal resistance, and safe operating area (SOA) information.

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