The MMBT5551L is a high voltage NPN bipolar junction transistor (BJT) manufactured by UTC (Unisonic Technologies Co., Ltd.). It is designed for high-voltage switching and amplification applications where a small signal transistor is needed.

Applications

• High-Voltage Switching
• High-Voltage Amplification
• Linear Amplification
• Driver Circuits
• Signal Processing

Features

• High Voltage: VCEO = 160V
• High Current: IC = 600mA
• Low Saturation Voltage
• Small Signal Transistor
• SOT-23 Package

Benefits

• Suitable for High-Voltage Applications
• Small Footprint
• Good Amplification Performance
• Reliable Switching Capability
• Cost-Effective Solution

Additional Details

The MMBT5551L offers a high collector-emitter breakdown voltage (VCEO) of 160V, making it suitable for applications involving high voltages. Its continuous collector current (IC) rating of 600mA allows it to drive moderate loads. The low saturation voltage ensures efficient switching performance. The SOT-23 package provides a compact footprint for space-constrained applications. This transistor is commonly used in switching regulators, voltage converters, and other high-voltage circuits. The hFE is typically in the range of 80-250. It’s frequently used in applications where a small, high-voltage NPN transistor is required for signal amplification or switching. The MMBT5551L provides a reliable and cost-effective solution for high-voltage applications requiring a small signal transistor. It adheres to RoHS standards for environmental compliance. The transition frequency is high enough for use in many moderate speed amplifier applications.