The 15N10 is an N-channel enhancement mode MOSFET manufactured by VBsemi. It's designed for high-efficiency switching applications. The TO-251 package offers good thermal performance for power dissipation.

Applications

• DC-DC converters
• Power management in portable devices
• Motor control
• LED lighting
• Load switching

Features

• Low On-Resistance (RDS(on)): Minimizes conduction losses for improved efficiency.
• Fast Switching Speed: Reduces switching losses in high-frequency applications.
• High Avalanche Energy: Provides ruggedness and reliability in demanding environments.
• Logic Level Gate Drive: Enables direct drive from logic circuits.
• RoHS Compliant: Meets environmental regulations.

Benefits

• Increased Efficiency: Low RDS(on) reduces power dissipation and improves overall efficiency.
• Reduced Heat Dissipation: Lower losses translate to less heat generated, simplifying thermal management.
• Improved System Performance: Fast switching speed contributes to faster response times and improved system performance.
• Simplified Design: Logic level gate drive simplifies the design and reduces component count.
• Enhanced Reliability: High avalanche energy rating ensures robust and reliable operation.

Technical Specifications

While specific values may vary slightly, typical specifications include:

• Drain-Source Voltage (VDS): 100V
• Gate-Source Voltage (VGS): ±20V
• Continuous Drain Current (ID): 15A
• Pulsed Drain Current (IDM): 60A
• On-Resistance (RDS(on)): 0.12 Ohms (at VGS = 10V)
• Gate Threshold Voltage (VGS(th)): 2-4V
• Total Gate Charge (Qg): 15 nC
• Operating Temperature Range: -55°C to +175°C

The VBsemi 15N10 in the TO-251 package is a versatile N-channel MOSFET suitable for a wide range of switching applications. Its low on-resistance, fast switching speed, and high avalanche energy make it a reliable and efficient choice for modern electronic designs.