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2N5565

Part No 2N5565
Manufacturer Vishay
Catalog Hard To Find
Description Matched N-Channel JFET Pairs
Sample
Rohs State rohs
ECAD Module
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Manufacturer Vishay
Win Source Part Number 1123979-2N5565
Manufacturer Homepage www.vishay.com
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian 2N5565 CAD Model

Description

The 2N5565 is a monolithic dual N-channel junction field-effect transistor (JFET) manufactured by Vishay. This dual JFET is designed for differential amplifier applications, where matched characteristics are essential for optimal performance. It is particularly suitable for low-noise and high-input impedance amplifier stages.

Applications:

  • Differential Amplifiers: Specifically designed for differential amplifier circuits where matched characteristics are crucial.
  • Instrumentation Amplifiers: Used in instrumentation amplifiers to amplify small differential signals.
  • Audio Preamplifiers: Suitable for use in low-noise audio preamplifier stages.
  • Analog Switches: Can be used as analog switches due to their low on-resistance and fast switching speed.
  • Voltage Comparators: Employed in voltage comparator circuits.

Features:

  • Dual Monolithic Construction: Provides excellent matching of electrical characteristics between the two JFETs.
  • N-Channel JFET: Standard N-channel JFET configuration.
  • High Input Impedance: Minimizes loading on signal sources.
  • Low Noise: Ensures minimal noise contribution to the amplified signal.
  • High Common-Mode Rejection Ratio (CMRR): Effectively rejects common-mode signals.

Benefits:

  • Improved Accuracy: Matched characteristics enhance the accuracy of differential amplifier circuits.
  • Reduced Noise: Low noise operation improves signal clarity.
  • Increased Input Sensitivity: High input impedance allows for the amplification of weak signals.
  • Enhanced Performance: High CMRR minimizes the effects of unwanted common-mode signals.
  • Simplified Design: Dual JFET configuration simplifies differential amplifier design.

Technical Specifications:

  • Gate-Source Breakdown Voltage (V(BR)GSS): Consult the datasheet.
  • Drain-Source On Resistance (rDS(on)): Consult the datasheet.
  • Gate Reverse Current (IGSS): Consult the datasheet.
  • Drain Current (IDSS): Consult the datasheet.
  • Common-Mode Rejection Ratio (CMRR): Consult the datasheet.

For detailed specifications, refer to the Vishay datasheet for the 2N5565 dual JFET.

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