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Same model may have multiple batches, images only for reference.
IRC530PBF
Same model may have multiple batches, images only for reference.

IRC530PBF

Part No IRC530PBF
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 100V 14A TO-220-5
Datasheet
IRC530PBF Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Tube/Rail
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 100V
Continuous Drain Current at 25°C 14A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 26nC @ 10V
Max Input Capacitance 700pF @ 25V
Maximum Gate-Source Voltage ±20V
FET Feature Current Sensing
Power Dissipation (Max) 88W (Tc)
Maximum Rds On at Id,Vgs 160 mOhm @ 8.4A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting Through Hole
Case / Package TO-220-5
Dimension TO-220-5
Win Source Part Number 1046376-IRC530PBF
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IRC530PBF CAD Model

Description

The Vishay IRC530PBF is a high-quality N-channel MOSFET designed for current sensing applications.

  • Package: TO-220-5
  • Packaging: tube/rail package
  • Drain-Source Breakdown Voltage: 100V
  • Continuous Drain Current: 14A (Tc) @ 25°C
  • Maximum Rds On @ Id, Vgs: 160 mOhm @ 8.4A, 10V
  • Gate-Source Threshold Voltage: 4V @ 250μA
  • Max Gate Charge: 26nC @ 10V
  • Temperature Range: -55°C to 175°C (TJ)
  • Popularity: medium
  • Estimated Production Lead Time: balance.

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