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Same model may have multiple batches, images only for reference.
IRF530L
Same model may have multiple batches, images only for reference.

IRF530L

Part No IRF530L
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 100V 14A TO-262
Datasheet
IRF530L Datasheet
Sample
Rohs State Need to verify
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 100V
Continuous Drain Current at 25°C 14A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 26nC @ 10V
Max Input Capacitance 670pF @ 25V
Maximum Gate-Source Voltage ±20V
Maximum Rds On at Id,Vgs 160 mOhm @ 8.4A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting Through Hole
Case / Package TO-262
Dimension TO-262-3 Long Leads, I2Pak, TO-262AA
Win Source Part Number 159563-IRF530L
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian IRF530L CAD Model

Description

The IRF530L is a MOSFET product manufactured by Vishay.

  • Win Source Part Number: 159563-IRF530L
  • Mounting: Through Hole
  • Category: discrete semiconductor
  • Polarity: N-Channel
  • Drive Voltage: 10V
  • Temperature Range: -55°C to 175°C (TJ)
  • Case/Package: TO-262
  • Dimension: TO-262-3 Long Leads, I2Pak, TO-262AA
  • Drain-Source Breakdown Voltage: 100V
  • Continuous Drain Current: 14A (Tc) @ 25°C
  • Gate-Source Threshold Voltage: 4V @ 250μA
  • Maximum Gate Charge: 26nC @ 10V
  • Maximum Input Capacitance: 670pF @ 25V
  • Maximum Gate-Source Voltage: ±20V
  • Maximum Rds On: 160 mOhm @ 8.4A, 10V

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