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Same model may have multiple batches, images only for reference.
IRF630S Real Image
Same model may have multiple batches, images only for reference.

IRF630S

Part No IRF630S
Manufacturer Vishay
Catalog FETs - Single
Description N-channel TrenchMOS transistor | MOSFET N-CH 200V 9A D2PAK
Sample
Rohs State Need to verify
ECAD Module
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Products specifications Report Issue?

Popularity Medium
Supply and Demand Status Limited
Manufacturer Homepage www.nxp.com
Win Source Part Number 1187103-IRF630S
MSL Level 1 (Unlimited)
Manufacturer Pack Quantity 50
Manufacturer Package TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Supplier Device Package D2PAK (TO-263)
Mounting Style SMD
Temperature Range - Operating -55°C ~ 150°C
Power Dissipation (Maximum) 3W, 74W
Input Capacitance (Ciss) (Maximum) at Vds 800pF at 25V
Gate Source Voltage (Maximum) ±20V
Gate Charge (Qg) (Maximum) at Vgs 43nC at 10V
Gate Source Voltage(th) (Maximum) at Id 4V at 250μA
Rds On (Maximum) at Id, Vgs 400mOhm at 5.4A, 10V
Drive Voltage (Max Rds On, Min Rds On) 10V
Id - Continuous Drain Current 9A
Vds - Drain-Source Breakdown Voltage 200V
Technology MOSFET
Transistor Polarity N-Channel
Status Obsolete
Packaging Tube
Manufacturer Vishay Siliconix
Categories Discrete Semiconductor Products
Ultra Librarian 3D Model Ultra Librarian IRF630S CAD Model

Description

The Vishay Siliconix IRF630S is an N-channel MOSFET designed for use in discrete semiconductor products.

  • GPTDescription: With a Vds - Drain-Source Breakdown Voltage of 200V and a continuous drain current of 9A, this MOSFET is ideal for a variety of applications.
  • GPTDescription: The Rds On (Maximum) @ Id, Vgs is 400mOhm @ 5.4A, 10V, and the gate-source voltage(th) (Maximum) @ Id is 4V @ 250μA.
  • GPTDescription: The gate charge (Qg) (Maximum) @ Vgs is 43nC @ 10V, and the input capacitance (Ciss) (Maximum) @ Vds is 800pF @ 25V.
  • GPTDescription: The IRF630S is available in a D2PAK (TO-263) package and is suitable for use in a range of operating temperatures from -55°C to 150°C.

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