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IRF730APBF

Part No IRF730APBF
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 400V 5.5A TO-220AB
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 400V
Continuous Drain Current at 25°C 5.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4.5V @ 250μA
Max Gate Charge 22nC @ 10V
Max Input Capacitance 600pF @ 25V
Maximum Gate-Source Voltage ±30V
Power Dissipation (Max) 74W (Tc)
Maximum Rds On at Id,Vgs 1 Ohm @ 3.3A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package TO-220AB
Dimension TO-220-3
Win Source Part Number 017499-IRF730APBF
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IRF730APBF CAD Model

Description

The Vishay 017499-IRF730APBF is an N-channel MOSFET with a drain-source breakdown voltage of 400V and a continuous drain current of 5.5A (Tc).

  • Maximum Gate-Source Voltage: ±30V
  • Gate-Source Threshold Voltage: 4.5V @ 250μA
  • Fast Recovery Speed: < 500ns, > 200mA (Io)
  • Power Dissipation: 74W (Tc)
  • Package: TO-220AB
  • Operating Temperature: -55°C to 150°C (TJ)
  • Ideal For: use in applications that require high voltage and current switching such as power supplies and motor control circuits

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Pricing & Ordering

Quantity Unit Price Ext. Price
30+ $1.9143 $57.4290
65+ $1.5708 $102.1020
100+ $1.5217 $152.1700
140+ $1.4726 $206.1640
180+ $1.4235 $256.2300
240+ $1.2762 $306.2880
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 3,000 pieces
MOQ: 30 pcs
Order Increment : 1 pcs
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