The Vishay Siliconix MOSFET is a high-performance semiconductor device used in a wide range of applications. It has a Vds - Drain-Source Breakdown Voltage of 400V and an Id - Continuous Drain Current of 5.5A, making it ideal for use in power electronics.

• Vds - Drain-Source Breakdown Voltage: 400V
• Id - Continuous Drain Current: 5.5A
• FET Feature: N-Channel
• Gate Source Voltage(th) (Maximum) @ Id: 4.5V @ 250μA
• Gate Charge (Qg) (Maximum) @ Vgs: 22nC @ 10V
• Input Capacitance (Ciss) (Maximum) @ Vds: 600pF @ 25V
• Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB package
• Power Dissipation (Maximum): 74W
• Temperature Range - Operating: -55°C ~ 150°C
• Status: Obsolete
• Manufacturer Supplied Quantity: 800