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Same model may have multiple batches, images only for reference.
IRF744 Real Image
Same model may have multiple batches, images only for reference.

IRF744

Part No IRF744
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 450V 8.8A TO-220AB
Datasheet
IRF744 Datasheet
Sample
Rohs State Need to verify
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Tube/Rail
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 450V
Continuous Drain Current at 25°C 8.8A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 80nC @ 10V
Max Input Capacitance 1400pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 125W (Tc)
Maximum Rds On at Id,Vgs 630 mOhm @ 5.3A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package TO-220AB
Dimension TO-220-3
Win Source Part Number 1046644-IRF744
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian IRF744 CAD Model

Description

The Vishay IRF744 is an N-Channel MOSFET designed for use in discrete semiconductor products.

  • FET Type: N-Channel
  • Power Dissipation (Max) @ Tc: 125 W
  • Voltage - Drain to Source Breakdown (Vdss): 450 V
  • Current - Continuous Drain (Id) @ 25°C: 8.8A (Tc)
  • Vgs(th) (Max) @ Id: 4V @ 250μA
  • Rds On (Max) @ Id, Vgs: 630 mOhm @ 5.3A, 10V
  • Package / Case: TO-220AB
  • Dimension: TO-220-3
  • Gate-Source Voltage: ±20V
  • Input Capacitance (Ciss) @ Vds: 1400 pF @ 25 V
  • Supply and Demand Status: Sufficient

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