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Same model may have multiple batches, images only for reference.
IRF820APBF Real Image
Same model may have multiple batches, images only for reference.

IRF820APBF

Part No IRF820APBF
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 500V 2.5A TO-220AB
Datasheet
IRF820APBF Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 500V
Continuous Drain Current at 25°C 2.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4.5V @ 250μA
Max Gate Charge 17nC @ 10V
Max Input Capacitance 340pF @ 25V
Maximum Gate-Source Voltage ±30V
Power Dissipation (Max) 50W (Tc)
Maximum Rds On at Id,Vgs 3 Ohm @ 1.5A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package TO-220AB
Dimension TO-220-3
Win Source Part Number 017539-IRF820APBF
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IRF820APBF CAD Model

Description

This electronic component is a MOSFET technology with an N-Channel polarity and a power dissipation of 50W (Tc).

  • Suitable for: Various electronic devices
  • Design: Designed to meet the needs of electronic engineers and enthusiasts
  • Qualities: Reliable, durable, and efficient
  • Case/Package: TO-220AB
  • Dimension: TO-220-3

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Pricing & Ordering

Quantity Unit Price Ext. Price
40+ $1.6280 $65.1200
80+ $1.5230 $121.8400
120+ $1.4705 $176.4600
170+ $1.3654 $232.1180
220+ $1.3129 $288.8380
275+ $1.2605 $346.6375
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 1,460 pieces
MOQ: 40 pcs
Order Increment : 1 pcs
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