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Same model may have multiple batches, images only for reference.
IRF830PBF Real Image
Same model may have multiple batches, images only for reference.

IRF830PBF

Part No IRF830PBF
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 500V 4.5A TO-220AB
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 500V
Continuous Drain Current at 25°C 4.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 38nC @ 10V
Max Input Capacitance 610pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 74W (Tc)
Maximum Rds On at Id,Vgs 1.5 Ohm @ 2.7A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package TO-220AB
Dimension TO-220-3
Win Source Part Number 017541-IRF830PBF
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian IRF830PBF CAD Model

Description

It has a sufficient supply and demand status and is mounted using through-hole technology.

  • Status: Active
  • Maximum Power Dissipation: 74W (Tc)
  • Drain-Source Breakdown Voltage: 500V

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Pricing & Ordering

Quantity Unit Price Ext. Price
90+ $0.5836 $52.5240
210+ $0.4789 $100.5690
325+ $0.4639 $150.7675
450+ $0.4489 $202.0050
580+ $0.4340 $251.7200
775+ $0.3891 $301.5525
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 200 pieces
MOQ: 90 pcs
Order Increment : 1 pcs
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