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IRF840APBF

Part No IRF840APBF
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 500V 8A TO-220AB
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 500V
Continuous Drain Current at 25°C 8A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 38nC @ 10V
Max Input Capacitance 1018pF @ 25V
Maximum Gate-Source Voltage ±30V
Power Dissipation (Max) 125W (Tc)
Maximum Rds On at Id,Vgs 850 mOhm @ 4.8A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package TO-220AB
Dimension TO-220-3
Win Source Part Number 017545-IRF840APBF
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Balance
Family Name IRF840A
Introduction Date March 27, 2007
ECCN EAR99
Country of Origin China
Halogen Free Compliant
Estimated EOL Date 2024
Ultra Librarian 3D Model Ultra Librarian IRF840APBF CAD Model

Description

The Vishay IRF840APBF is a high power N-channel MOSFET transistor.

  • Maximum Power Dissipation: 125W
  • Continuous Drain Current: 8A @ 25°C
  • Popularity: high
  • Supply and Demand: balance
  • Features: low on-resistance and a high switching speed
  • Commonly used in: power supplies, motor control, and lighting applications
  • Breakdown Voltage: 500V
  • Gate-Source Threshold Voltage: 4V @ 250μA
  • Maximum Gate-Source Voltage: ±30V
  • Maximum Input Capacitance: 1018pF @ 25V
  • Halogen-Free: compliant
  • ECCN: EAR99
  • Estimated EOL Date: 2024

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Pricing & Ordering

Quantity Unit Price Ext. Price
55+ $0.9961 $54.7855
125+ $0.8173 $102.1625
190+ $0.7918 $150.4420
265+ $0.7663 $203.0695
340+ $0.7407 $251.8380
455+ $0.6641 $302.1655
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 3,000 pieces
MOQ: 55 pcs
Order Increment : 1 pcs
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Shipped from HK warehouse
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