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IRF840BPBF

Part No IRF840BPBF
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 500V 8.7A TO-220AB
Datasheet
Sample
Rohs State rohs
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Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 500V
Continuous Drain Current at 25°C 8.7A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 5V @ 250μA
Max Gate Charge 30nC @ 10V
Max Input Capacitance 527pF @ 100V
Maximum Gate-Source Voltage ±30V
Power Dissipation (Max) 156W (Tc)
Maximum Rds On at Id,Vgs 850 mOhm @ 4A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package TO-220AB
Dimension TO-220-3
Win Source Part Number 60129-IRF840BPBF
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian IRF840BPBF CAD Model

Description

This MOSFET electronic component is manufactured by Vishay, with a Win Source Part Number of 60129-IRF840BPBF.

  • Packaging: tube/rail
  • Mounting: through a hole
  • Drive Voltage: maximum of 10V
  • Drain-Source Breakdown Voltage: 500V
  • Continuous Drain Current: 8.7A (Tc) @ 25°C
  • Maximum Rds on @ Id,Vgs: 850 mOhm @ 4A, 10V
  • Category: discrete semiconductor product
  • Supply and Demand Status: limited

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Pricing & Ordering

Quantity Unit Price Ext. Price
65+ $0.7943 $51.6295
155+ $0.6518 $101.0290
240+ $0.6314 $151.5360
330+ $0.6110 $201.6300
425+ $0.5907 $251.0475
570+ $0.5296 $301.8720
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 1,840 pieces
MOQ: 65 pcs
Order Increment : 1 pcs
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Shipping Information

Shipped from HK warehouse
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