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Same model may have multiple batches, images only for reference.
IRF840LC Real Image
Same model may have multiple batches, images only for reference.

IRF840LC

Part No IRF840LC
Manufacturer Vishay
Catalog FETs - Single
Description Power MOSFET | MOSFET N-CH 500V 8A TO-220AB
Sample
Rohs State Need to verify
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay Siliconix
Packaging Tube
Transistor Polarity N-Channel
Technology MOSFET
Vds - Drain-Source Breakdown Voltage 500V
Id - Continuous Drain Current 8A
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Maximum) at Id, Vgs 850mOhm at 4.8A, 10V
Gate Source Voltage(th) (Maximum) at Id 4V at 250μA
Gate Charge (Qg) (Maximum) at Vgs 39nC at 10V
Gate Source Voltage (Maximum) ±30V
Input Capacitance (Ciss) (Maximum) at Vds 1100pF at 25V
Power Dissipation (Maximum) 125W
Temperature Range - Operating -55°C ~ 150°C
Mounting Style Through Hole
Supplier Device Package TO-220AB
Manufacturer Package TO-220-3
Manufacturer Pack Quantity 1,000
MSL Level 1 (Unlimited)
Win Source Part Number 1187410-IRF840LC
Manufacturer Homepage www.vishay.com
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IRF840LC CAD Model

Description

The IRF840LC is an N-channel MOSFET transistor manufactured by Vishay Siliconix. It is designed for through-hole mounting and is available in a TO-220AB package.

  • Type: N-channel MOSFET
  • Mounting Type: Through-hole
  • Package: TO-220AB
  • Drain-Source Breakdown Voltage: 500V
  • Continuous Drain Current: 8A
  • On-Resistance (Max): 850mOhm @ 4.8A and 10V
  • Gate-Source Voltage Threshold: 4V @ 250μA
  • Maximum Gate-Source Voltage: ±30V
  • Input Capacitance: 1100pF @ 25V
  • Gate Charge: 39nC @ 10V
  • Drive Voltage: 10V
  • Power Dissipation: 125W
  • Operating Temperature: -55°C to 150°C
  • Package Type: Tube
  • Popularity: Medium
  • Manufacturer Pack Quantity: 1,000
  • MSL Level: 1 (unlimited)

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105+ $1.4288 $150.0240
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255+ $1.1984 $305.5920
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