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Same model may have multiple batches, images only for reference.
IRF9510SPBF Real Image
Same model may have multiple batches, images only for reference.

IRF9510SPBF

Part No IRF9510SPBF
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 100V 4A D2PAK
Datasheet
IRF9510SPBF Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Cut Reel
Status Active
Polarity P-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 100V
Continuous Drain Current at 25°C 4A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 8.7nC @ 10V
Max Input Capacitance 200pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 43W (Tc)
Maximum Rds On at Id,Vgs 1.2 Ohm @ 2.4A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Dimension TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Win Source Part Number 1037505-IRF9510SPBF
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IRF9510SPBF CAD Model

Description

The Vishay IRF9510SPBF is a P-channel MOSFET that has a drain-source breakdown voltage of 100V and a continuous drain current of 4A @ 25°C.

  • Mounting Type: Surface Mount
  • Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • On-Resistance: 1.2 Ohm @ 2.4A and 10V
  • Manufacturer: Vishay

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Pricing & Ordering

Quantity Unit Price Ext. Price
40+ $1.3349 $53.3960
95+ $1.0954 $104.0630
145+ $1.0611 $153.8595
195+ $1.0269 $200.2455
255+ $0.9927 $253.1385
340+ $0.8900 $302.6000
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Availability: 1,600 pieces
MOQ: 40 pcs
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