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IRF9520PBF

Part No IRF9520PBF
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description Trans MOSFET P-CH 100V 6.8A 3-Pin(3+Tab) TO-220AB / MOSFET P-CH 100V 6.8A TO-220AB
Datasheet
Sample
Rohs State rohs
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Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Tube/Rail
Status Active
Polarity P-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 100V
Continuous Drain Current at 25°C 6.8A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 18nC @ 10V
Max Input Capacitance 390pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 60W (Tc)
Maximum Rds On at Id,Vgs 600 mOhm @ 4.1A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting Through Hole
Case / Package TO-220AB
Dimension TO-220-3
Win Source Part Number 205327-IRF9520PBF
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Limited
Family Name IRF9520
Introduction Date March 27, 2007
ECCN EAR99
Country of Origin China
Halogen Free Compliant
Estimated EOL Date 2026
Ultra Librarian 3D Model Ultra Librarian IRF9520PBF CAD Model

Description

The Vishay 205327-IRF9520PBF is a MOSFET technology-based P-channel discrete semiconductor product designed for through-hole mounting.

  • Drain-Source Breakdown Voltage: 100V
  • Maximum Power Dissipation: 60W (Tc)
  • Continuous Drain Current: 6.8A (Tc) @ 25°C
  • Maximum Rds On @ Id, Vgs: 600 mOhm @ 4.1A, 10V
  • Gate-Source Threshold Voltage: 4V @ 250μA
  • Max Gate Charge: 18nC @ 10V
  • Maximum Input Capacitance: 390pF @ 25V
  • Maximum Gate-Source Voltage: ±20V
  • Popularity: popular choice
  • Designed for: active applications

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Pricing & Ordering

Quantity Unit Price Ext. Price
9+ $5.8647 $52.7823
21+ $4.8121 $101.0541
33+ $4.6617 $153.8361
45+ $4.5113 $203.0085
58+ $4.3610 $252.9380
77+ $3.9098 $301.0546
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 11,290 pieces
MOQ: 9 pcs
Order Increment : 1 pcs
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