The Vishay MOSFET is a P-Channel power transistor with a maximum power dissipation of 3.7W (Ta) and 60W (Tc).

• Drive Voltage: 10V
• Drain-Source Breakdown Voltage: 100V
• Continuous Drain Current @ 25°C: 6.8A (Tc)
• Gate-Source Threshold Voltage: 4V @ 250μA
• Maximum Gate Charge: 18nC @ 10V
• Maximum Input Capacitance: 390pF @ 25V
• Maximum Rds On @ Id,Vgs: 600 mOhm @ 4.1A, 10V
• Packaging: D2PAK
• Temperature Range: -55°C to 175°C (TJ)
• Product Status: Active
• Alternative Parts: IRF9520NSTRRPBF, SiHF9520STRL-GE3, IRF9520SPBF, and SiHF9520S-E3