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Same model may have multiple batches, images only for reference.
IRF9620SPBF Real Image
Same model may have multiple batches, images only for reference.

IRF9620SPBF

Part No IRF9620SPBF
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 200V 3.5A D2PAK
Datasheet
IRF9620SPBF Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Tube/Rail
Status Active
Polarity P-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 200V
Continuous Drain Current at 25°C 3.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 22nC @ 10V
Max Input Capacitance 350pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 3W (Ta), 40W (Tc)
Maximum Rds On at Id,Vgs 1.5 Ohm @ 1.5A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package D2PAK
Dimension TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Win Source Part Number 136728-IRF9620SPBF
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian IRF9620SPBF CAD Model

Description

The IRF9620SPBF is a P-channel MOSFET manufactured by Vishay.

  • Packaging: tube/rail
  • Mounting: SMD (SMT)
  • Power Dissipation: 3W (Ta) and 40W (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Drain-Source Breakdown Voltage: 200V
  • Continuous Drain Current: 3.5A (Tc)
  • Gate-Source Threshold Voltage: 4V @ 250μA
  • Maximum Gate Charge: 22nC @ 10V
  • Maximum Input Capacitance: 350pF @ 25V
  • Category: Discrete Semiconductor Products
  • ECCN: EAR99
  • Supply and Demand Status: Limited

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