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Same model may have multiple batches, images only for reference.
IRF9630 Real Image
Same model may have multiple batches, images only for reference.

IRF9630

Part No IRF9630
Manufacturer Vishay
Catalog FETs - Single
Description P-CHANNEL POWER MOSFETS | MOSFET P-CH 200V 6.5A TO-220AB
Sample
Rohs State Need to verify
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay Siliconix
Packaging Tube
Status Obsolete
Transistor Polarity P-Channel
Technology MOSFET
Vds - Drain-Source Breakdown Voltage 200V
Id - Continuous Drain Current 6.5A
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Maximum) at Id, Vgs 800mOhm at 3.9A, 10V
Gate Source Voltage(th) (Maximum) at Id 4V at 250μA
Gate Charge (Qg) (Maximum) at Vgs 29nC at 10V
Gate Source Voltage (Maximum) ±20V
Input Capacitance (Ciss) (Maximum) at Vds 700pF at 25V
Power Dissipation (Maximum) 74W
Temperature Range - Operating -55°C ~ 150°C
Mounting Style Through Hole
Supplier Device Package TO-220AB
Manufacturer Package TO-220-3
Manufacturer Pack Quantity 1,000
MSL Level 1 (Unlimited)
Win Source Part Number 1187456-IRF9630
Manufacturer Homepage www.samsung.com/Products/Semiconductor
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IRF9630 CAD Model

Description

The Vishay Siliconix IRF9630 is a P-Channel MOSFET transistor that comes in a TO-220AB package.

  • Product Type: MOSFET Transistor
  • Channel Type: P-Channel
  • Package: TO-220AB
  • Vds - Drain-Source Breakdown Voltage: 200V
  • Continuous Drain Current: 6.5A
  • Rds On (Maximum) @ Id, Vgs: 800mOhm @ 3.9A, 10V
  • Gate Source Voltage(th) (Maximum) @ Id: 4V @ 250μA
  • Gate Charge (Qg) (Maximum) @ Vgs: 29nC @ 10V
  • Product Status: Obsolete
  • Power Dissipation (maximum): 74W

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Quantity Unit Price Ext. Price
110+ $0.4717 $51.8870
230+ $0.4418 $101.6140
355+ $0.4269 $151.5495
505+ $0.3971 $200.5355
655+ $0.3821 $250.2755
820+ $0.3672 $301.1040
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