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Same model may have multiple batches, images only for reference.
IRF9Z10PBF Real Image
Same model may have multiple batches, images only for reference.

IRF9Z10PBF

Part No IRF9Z10PBF
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 60V 6.7A TO220AB
Datasheet
IRF9Z10PBF Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Tube/Rail
Status Active
Polarity P-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 60V
Continuous Drain Current at 25°C 6.7A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 12nC @ 10V
Max Input Capacitance 270pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 43W (Tc)
Maximum Rds On at Id,Vgs 500 mOhm @ 4A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting Through Hole
Case / Package TO-220AB
Dimension TO-220-3
Win Source Part Number 130235-IRF9Z10PBF
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IRF9Z10PBF CAD Model

Description

The Vishay 130235-IRF9Z10PBF is a MOSFET that is designed for through-hole mounting.

  • Mounting Type: Through-Hole
  • Channel Type: P-channel
  • Maximum Power Dissipation: 43W
  • Drive Voltage: 10V
  • Drain-Source Breakdown Voltage: 60V
  • Continuous Drain Current at 25°C: 6.7A @ 25°C
  • Gate-Source Threshold Voltage: 4V @ 250μA
  • Maximum Gate Charge: 12nC @ 10V
  • Maximum Input Capacitance: 270pF @ 25V
  • Maximum Gate-Source Voltage: ±20V
  • Supply and Demand Status: balanced

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53+ $1.8960 $100.4880
82+ $1.8368 $150.6176
113+ $1.7775 $200.8575
146+ $1.7183 $250.8718
195+ $1.5405 $300.3975
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Availability: 2,520 pieces
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