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IRF9Z10PBF

Name: IRF9Z10PBF
Brand: Vishay
SKU: 160222
Availability: InStock
Rating: 4.85 (5 reviews)

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Part No	IRF9Z10PBF
Manufacturer	Vishay
Catalog	Transistors - FETs, MOSFETs - RF
Description	MOSFET P-CH 60V 6.7A TO220AB
Datasheet	IRF9Z10PBF Datasheet
Sample
Rohs State
ECAD Module
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Products specifications Report Issue?

Categories	Discrete Semiconductor Products
Manufacturer	Vishay
Packaging	Tube/Rail
Status	Active
Polarity	P-Channel
Technology	MOSFET
Drain-Source Breakdown Voltage	60V
Continuous Drain Current at 25°C	6.7A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Gate-Source Threshold Voltage	4V @ 250μA
Max Gate Charge	12nC @ 10V
Max Input Capacitance	270pF @ 25V
Maximum Gate-Source Voltage	±20V
Power Dissipation (Max)	43W (Tc)
Maximum Rds On at Id,Vgs	500 mOhm @ 4A, 10V
Temperature Range - Operating	-55°C to 175°C (TJ)
Mounting	Through Hole
Case / Package	TO-220AB
Dimension	TO-220-3
Win Source Part Number	130235-IRF9Z10PBF
Popularity	Medium
Supply and Demand Status	Balance
Ultra Librarian 3D Model	Ultra Librarian IRF9Z10PBF CAD Model

Description

The Vishay 130235-IRF9Z10PBF is a MOSFET that is designed for through-hole mounting.

Mounting Type: Through-Hole
Channel Type: P-channel
Maximum Power Dissipation: 43W
Drive Voltage: 10V
Drain-Source Breakdown Voltage: 60V
Continuous Drain Current at 25°C: 6.7A @ 25°C
Gate-Source Threshold Voltage: 4V @ 250μA
Maximum Gate Charge: 12nC @ 10V
Maximum Input Capacitance: 270pF @ 25V
Maximum Gate-Source Voltage: ±20V
Supply and Demand Status: balanced

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Pricing & Ordering

Quantity	Unit Price	Ext. Price
22+	$2.3108	$50.8376
53+	$1.8960	$100.4880
82+	$1.8368	$150.6176
113+	$1.7775	$200.8575
146+	$1.7183	$250.8718
195+	$1.5405	$300.3975

* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.

Availability: 2,520 pieces

MOQ: 22 pcs

Order Increment : 1 pcs

Qty:

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Shipping Information

Shipped from	HK warehouse
Expected Shipping Date	Ship today if order in (HKT)
Supplier Lead-Time	Call for availability
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