The Vishay MOSFET is a P-channel device that is used for various applications.

• Power Dissipation (Max): 3.7W (Ta), 88W (Tc)
• Temperature Range: -55°C to 175°C (TJ)
• Case/Package: D2PAK
• Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
• Drain-Source Breakdown Voltage: 60V
• Continuous Drain Current at 25°C: 18A (Tc)
• Gate-Source Threshold Voltage: 4V @ 250μA
• Maximum Gate Charge: 34nC @ 10V
• Maximum Input Capacitance: 1100pF @ 25V
• Maximum Gate-Source Voltage: ±20V
• Maximum Rds On at Id,Vgs: 140 mOhm @ 11A, 10V
• Supply and Demand Status: balanced