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Same model may have multiple batches, images only for reference.
IRFBC40AS Real Image
Same model may have multiple batches, images only for reference.

IRFBC40AS

Part No IRFBC40AS
Manufacturer Vishay
Catalog FETs - Single
Description Power MOSFET(Vdss=600V, Rds(on)max=1.2ohm, Id=6.2A) | MOSFET N-CH 600V 6.2A D2PAK
Sample
Rohs State Need to verify
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay Siliconix
Packaging Tube
Status Obsolete
Transistor Polarity N-Channel
Technology MOSFET
Vds - Drain-Source Breakdown Voltage 600V
Id - Continuous Drain Current 6.2A
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Maximum) at Id, Vgs 1.2Ohm at 3.7A, 10V
Gate Source Voltage(th) (Maximum) at Id 4V at 250μA
Gate Charge (Qg) (Maximum) at Vgs 42nC at 10V
Gate Source Voltage (Maximum) ±30V
Input Capacitance (Ciss) (Maximum) at Vds 1036pF at 25V
Power Dissipation (Maximum) 125W
Temperature Range - Operating -55°C ~ 150°C
Mounting Style SMD
Supplier Device Package D2PAK
Manufacturer Package TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Manufacturer Pack Quantity 50
MSL Level 1 (Unlimited)
Win Source Part Number 1187536-IRFBC40AS
Manufacturer Homepage www.irf.com
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IRFBC40AS CAD Model

Description

The IRFBC40AS is an N-Channel MOSFET manufactured by Vishay Siliconix.

  • Power Dissipation: 125W
  • Maximum Drain-Source Breakdown Voltage: 600V
  • Designed for general-purpose switching applications
  • Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Maximum Continuous Drain Current: 6.2A
  • Maximum Gate-Source Voltage: ±30V
  • Maximum Gate-Source Voltage: 4V @ 250μA
  • easy to drive and can be used in a variety of electronic circuits.

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Quantity Unit Price Ext. Price
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195+ $0.6075 $118.4625
295+ $0.5879 $173.4305
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705+ $0.4932 $347.7060
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