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Same model may have multiple batches, images only for reference.
IRFBC40ASTRRPBF Real Image
Same model may have multiple batches, images only for reference.

IRFBC40ASTRRPBF

Part No IRFBC40ASTRRPBF
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 600V 6.2A D2PAK
Datasheet
IRFBC40ASTRRPBF Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 600V
Continuous Drain Current at 25°C 6.2A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 42nC @ 10V
Max Input Capacitance 1036pF @ 25V
Maximum Gate-Source Voltage ±30V
Power Dissipation (Max) 125W (Tc)
Maximum Rds On at Id,Vgs 1.2 Ohm @ 3.7A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package D2PAK
Dimension TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Win Source Part Number 205353-IRFBC40ASTRRPBF
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian IRFBC40ASTRRPBF CAD Model

Description

The Vishay IRFBC40ASTRRPBF is an N-channel MOSFET that can handle a continuous drain current of 6.2A @ 25°C.

  • Breakdown Voltage: 600V
  • Power Dissipation: 125W (Tc)
  • Maximum Rds On at Id,Vgs: 1.2 Ohm @ 3.7A, 10V
  • Package: D2PAK
  • Mounting: Surface mount technology
  • Operating Temperature Range: -55°C to 150°C (TJ)
  • Supply and Demand Status: Limited

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38+ $3.1090 $118.1420
58+ $3.0118 $174.6844
80+ $2.9147 $233.1760
103+ $2.8175 $290.2025
138+ $2.5260 $348.5880
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Availability: 32,000 pieces
MOQ: 16 pcs
Order Increment : 1 pcs
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