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IRFBC40SPBF

Part No IRFBC40SPBF
Manufacturer Vishay
Catalog FETs - Single
Description HEXFET® Power MOSFET | MOSFET N-CH 600V 6.2A D2PAK
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Vishay Siliconix
Packaging Tube
Transistor Polarity N-Channel
Technology MOSFET
Vds - Drain-Source Breakdown Voltage 600V
Id - Continuous Drain Current 6.2A
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Maximum) at Id, Vgs 1.2Ohm at 3.7A, 10V
Gate Source Voltage(th) (Maximum) at Id 4V at 250μA
Gate Charge (Qg) (Maximum) at Vgs 60nC at 10V
Gate Source Voltage (Maximum) ±20V
Input Capacitance (Ciss) (Maximum) at Vds 1300pF at 25V
Power Dissipation (Maximum) 3.1W, 130W
Temperature Range - Operating -55°C ~ 150°C
Mounting Style SMD
Supplier Device Package D2PAK
Manufacturer Package TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Manufacturer Pack Quantity 1,000
MSL Level 1 (Unlimited)
Win Source Part Number 1187540-IRFBC40SPBF
Manufacturer Homepage www.irf.com
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IRFBC40SPBF CAD Model

Description

The IRFBC40SPBF is a high-voltage N-channel MOSFET from Vishay Semiconductors. It's designed for high-efficiency switching applications, offering a combination of fast switching speed, low on-resistance, and robust avalanche characteristics. This MOSFET is available in a TO-263 (D2PAK) package, suitable for surface mounting and efficient heat dissipation.

Applications

  • Switch Mode Power Supplies (SMPS)
  • Uninterruptible Power Supplies (UPS)
  • Motor control circuits
  • High-voltage DC-DC converters
  • Lighting ballasts

Features

  • N-Channel MOSFET
  • High voltage rating (600V)
  • Low on-resistance (RDS(on))
  • Fast switching speed
  • Avalanche rated
  • TO-263 (D2PAK) package
  • Lead-free and RoHS compliant

Benefits

  • Increased efficiency in power conversion circuits due to low on-resistance, minimizing power losses.
  • Reduced switching losses due to the fast switching speed.
  • Improved reliability in demanding applications due to the avalanche rating.
  • Easy surface mounting and efficient heat dissipation with the TO-263 package.
  • Compliant with environmental regulations.
  • Simplified thermal management due to the package design and low RDS(on).

Additional Details

The IRFBC40SPBF boasts a drain-source voltage (Vds) rating of 600V, making it suitable for high-voltage applications. Its low on-resistance (RDS(on) typically around 2.8 Ohms at Vgs=10V) minimizes conduction losses, leading to improved energy efficiency. The fast switching speed reduces switching losses, further enhancing overall efficiency. The avalanche rating ensures that the MOSFET can withstand transient voltage spikes, contributing to improved reliability. The TO-263 package allows for efficient heat dissipation, enabling the MOSFET to operate at higher power levels. It is crucial to consult the datasheet for detailed specifications, including gate charge, capacitance, and thermal resistance, to ensure optimal design and reliable operation in specific applications.

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Pricing & Ordering

Quantity Unit Price Ext. Price
24+ $2.4832 $59.5968
57+ $2.0374 $116.1318
88+ $1.9738 $173.6944
121+ $1.9101 $231.1221
157+ $1.8464 $289.8848
210+ $1.6553 $347.6130
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 1,420 pieces
MOQ: 24 pcs
Order Increment : 1 pcs
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