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Same model may have multiple batches, images only for reference.
IRFBF30PBF Real Image
Same model may have multiple batches, images only for reference.

IRFBF30PBF

Part No IRFBF30PBF
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 900V 3.6A TO-220AB
Datasheet
IRFBF30PBF Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 900V
Continuous Drain Current at 25°C 3.6A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 78nC @ 10V
Max Input Capacitance 1200pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 125W (Tc)
Maximum Rds On at Id,Vgs 3.7 Ohm @ 2.2A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package TO-220AB
Dimension TO-220-3
Win Source Part Number 205355-IRFBF30PBF
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IRFBF30PBF CAD Model

Description

The supply and demand status of this component is balanced.

  • Manufacturer: Vishay
  • Win Source Part Number: 205355-IRFBF30PBF
  • Polarity: N-Channel
  • Power Dissipation: 125W (Tc)
  • Drive Voltage: 10V
  • Drain-Source Breakdown Voltage: 900V
  • Continuous Drain Current @ 25°C: 3.6A (Tc)
  • Gate-Source Threshold Voltage: 4V @ 250μA
  • Maximum Gate Charge: 78nC @ 10V
  • Maximum Input Capacitance: 1200pF @ 25V
  • Maximum Gate-Source Voltage: ±20V
  • Maximum Rds On @ Id,Vgs: 3.7 Ohm @ 2.2A, 10V
  • Category: Discrete Semiconductor Products
  • Status: active
  • Temperature Range: -55°C to 150°C (TJ)
  • Case/Package: TO-220AB
  • Dimensions: TO-220-3

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Pricing & Ordering

Quantity Unit Price Ext. Price
23+ $2.2399 $51.5177
55+ $1.8379 $101.0845
85+ $1.7805 $151.3425
117+ $1.7230 $201.5910
151+ $1.6656 $251.5056
201+ $1.4933 $300.1533
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Availability: 868 pieces
MOQ: 23 pcs
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