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Same model may have multiple batches, images only for reference.
IRFD320PBF Real Image
Same model may have multiple batches, images only for reference.

IRFD320PBF

Part No IRFD320PBF
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 400V 490MA 4-DIP
Datasheet
IRFD320PBF Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 400V
Continuous Drain Current at 25°C 490mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 20nC @ 10V
Max Input Capacitance 410pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 1W (Ta)
Maximum Rds On at Id,Vgs 1.8 Ohm @ 210mA, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package 4-DIP, Hexdip, HVMDIP
Dimension 4-DIP (0.300", 7.62mm)
Win Source Part Number 084049-IRFD320PBF
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian IRFD320PBF CAD Model

Description

The Vishay IRFD320PBF is a N-Channel MOSFET transistor that is designed to operate in a wide temperature range of -55°C to 150°C.

  • Maximum Power Dissipation: 1W (Ta)
  • Drain-Source Breakdown Voltage: 400V
  • Continuous Drain Current @ 25°C: 490mA (Ta)
  • Gate-Source Threshold Voltage: 4V @ 250μA
  • Maximum Gate Charge: 20nC @ 10V
  • Maximum Input Capacitance: 410pF @ 25V
  • Maximum Rds On @ Id, Vgs: 1.8 Ohm @ 210mA, 10V
  • Supply and Demand Status: limited

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Pricing & Ordering

Quantity Unit Price Ext. Price
18+ $2.8779 $51.8022
43+ $2.3614 $101.5402
66+ $2.2876 $150.9816
91+ $2.2138 $201.4558
117+ $2.1400 $250.3800
157+ $1.9186 $301.2202
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Availability: 5,040 pieces
MOQ: 18 pcs
Order Increment : 1 pcs
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